Last edited by Zolotilar
Sunday, August 2, 2020 | History

5 edition of Silicon carbide power devices found in the catalog.

Silicon carbide power devices

B. Jayant Baliga

Silicon carbide power devices

by B. Jayant Baliga

  • 387 Want to read
  • 39 Currently reading

Published by World Scientific in New Jersey .
Written in English

    Subjects:
  • Silicon carbide -- Electric properties,
  • Semiconductors

  • Edition Notes

    Includes bibliographical references and index

    StatementB. Jayant Baliga
    Classifications
    LC ClassificationsTK7871.15.S56 B355 2005
    The Physical Object
    Paginationxxi, 503 p. :
    Number of Pages503
    ID Numbers
    Open LibraryOL17212214M
    ISBN 109812566058
    ISBN 109789812566058
    LC Control Number2006283987

    Get this from a library! Silicon carbide power devices. [B Jayant Baliga] -- Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases. Silicon carbide gate drivers – a disruptive technology in power electronics. Silicon carbide cannot realize its full potential without the right ecosystem, in this case, the gate driver. Read about the disruptive technology and how it is impacting power electronics.

      The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar : $ Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first Price: $

      This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy. Contents: Preface; IntroductionBrand: World Scientific Publishing Company. Silicon Carbide (SiC) devices have emerged as the most viable candidate for next-generation, low-loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon. SiC also allows designers to use fewer components, further reducing design is at the forefront in the development of SiC power.


Share this book
You might also like
Rowing and coaching

Rowing and coaching

Therapy outcome measures

Therapy outcome measures

Technology based cross-border alliances

Technology based cross-border alliances

Legislative Branch Appropriations for 2005

Legislative Branch Appropriations for 2005

Interest rates for carriers.

Interest rates for carriers.

Battle for Batangas

Battle for Batangas

Thomas Merton: a different drummer

Thomas Merton: a different drummer

ANNUAL REVIEW OF ADULT LEARNING AND LITERACY. VOLUME 2. THE JOSSEY-BASS HIGHER AND ADULT EDUCATION SERIES... ED457341... U.S. DEPARTMENT OF

ANNUAL REVIEW OF ADULT LEARNING AND LITERACY. VOLUME 2. THE JOSSEY-BASS HIGHER AND ADULT EDUCATION SERIES... ED457341... U.S. DEPARTMENT OF

Safe upper levels for vitamins and minerals

Safe upper levels for vitamins and minerals

Book prospectuses before 1801 in the Gough Collection, Bodleian Library, Oxford

Book prospectuses before 1801 in the Gough Collection, Bodleian Library, Oxford

Squares in contemporary architecture

Squares in contemporary architecture

Power comparisons for certain one-sample Kolmogorov-type statistics.

Power comparisons for certain one-sample Kolmogorov-type statistics.

Emotional memory across the adult lifespan

Emotional memory across the adult lifespan

Len the Hen (To Grow By Storybook Readers, Series A, Book 6)

Len the Hen (To Grow By Storybook Readers, Series A, Book 6)

Silicon carbide power devices by B. Jayant Baliga Download PDF EPUB FB2

The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution.

This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with Cited by: “Students or working professionals interested in SiC technology will find this book worth reading.” (IEEE Electrical Insulation Magazine, 1 November )“If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and systems.

SiC power MOSFETs entered commercial production inproviding rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers /5(4).

Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices.

17 rows  Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide Cited by:   This comprehensive Silicon carbide power devices book discusses the physics of operation and design of gallium nitride and silicon carbide power devices.

It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy. Contents: Preface; Introduction. Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field.

In this chapter, the challenges and recent developments of SiC power devices are : Yintang Yang, Baoxing Duan, Song Yuan, Hujun Jia. Annotation Current SiC research is being driven by the growing promise of applications in blue light diodes, integrated circuits operating at high temperatures, high power/high frequency devices, and quantum structures.

This reference draws together research findings from around the world, in the form of 36 specialized "Datareviews," which comprise numeric data, text, figures, and key 3/5(1). Power semiconductor devices are widely used for the control and management of electrical energy.

The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on 5/5(1).

This book relates the recent developments in several key electrical engineering RD labs, concentrating on power electronics switches and their use.

The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations.

The next section examines silicon carbide and its potentiality for power electronics applications and its present. High Voltage Silicon Carbide Power Devices Creating Technology That Creates Solutions John W. Palmour Cree, Inc. Silicon Drive Durham, NC ; USA Tel:: Email: [email protected] SiC MOSFETs and Schottky Diodes show Zero Q rr 2 4 6 8 10 Reduced Losses Using SiC JBS DiodeFile Size: 1MB.

Deep RIE Process for Silicon Carbide Power Electronics and MEMS: Conference Paper: Materials Research Society Symposia Proceedings, vol. ©Materials Research Society: Device Processing, Etching, MEMS: Beheim, Salupo: C Logic Gates Using Silicon Carbide JFET's: Conference Paper.

Abstract: Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher by: Provides a cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures.

This book uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Silicon power devices can also be classified based on their current and voltage-handling requirements as shown in Fig. Thyristors are available that can individually handle over V and A enabling the control of over 10 MW of power by a single monolithic device.

These devices are suitable for the HVDC power transmission applications. T.P. Smith, R.F. Davis, in Encyclopedia of Materials: Science and Technology, Silicon carbide (SiC) is a generic name for a material produced by numerous process routes that result in a host of different external and internal microstructures and, as a consequence, a broad range of properties.

The thermal, mechanical, chemical, and electronic properties of SiC make possible a substantial. The technology lead approach on these two areas sets the book apart from other recent offerings, such as 'Process Technology for SiC Devices', by Zetterling and 'Silicon Carbide, Recent Major Advances', by Choyke, Matsunami and by: 1.

- Buy Silicon Carbide, Volume 2: Power Devices and Sensors book online at best prices in India on Read Silicon Carbide, Volume 2: Power Devices and Sensors book reviews & author details and more at Free delivery on qualified : Hardcover.

The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution.

This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. Silicon Carbide Power Devices by B. Jayant Baliga and a great selection of related books, art and collectibles available now at - Silicon Carbide Power Devices by Baliga, B Jayant - AbeBooks.

Silicon carbide (SiC) offers significant advantages for power-switching devices because the critical field for avalanche breakdown is about ten times higher than in silicon. SiC power devices have.Silicon carbide (SiC), also known as carborundum / k ɑːr b ə ˈ r ʌ n d əm /, is a semiconductor containing silicon and occurs in nature as the extremely rare mineral tic SiC powder has been mass-produced since for use as an of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications Chemical formula: CSi.SiC power MOSFETs entered commercial production inproviding rugged, high-efficiency switches for high-frequency power systems.

In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers.